Substraat
-
3 inch Dia76.2mm saffierwafel 0.5mm dikte C-plane SSP
-
4inch SiC Epi wafer foar MOS of SBD
-
SiO2 Thin Film Thermal Oxide Silicon wafer 4 inch 6 inch 8 inch 12 inch
-
2 inch SiC ingot Dia50.8mmx10mmt 4H-N monokristallijn
-
Silicon-On-Isolator Substrate SOI wafer trije lagen foar mikroelektronika en radiofrekwinsje
-
SOI wafer isolator op silisium 8-inch en 6-inch SOI (Silicon-On-Insulator) wafers
-
4 inch SiC Wafers 6H Semi-isolearjende SiC Substraten prime, ûndersyk, en dummy grade
-
6 inch HPSI SiC substraat wafer Silicon Carbide Semi-beledigende SiC wafers
-
4inch Semi-beledigende SiC wafers HPSI SiC substraat Prime Production klasse
-
3 inch 76.2mm 4H-Semi SiC substraat wafer Silicon Carbide Semi-beledigende SiC wafers
-
3inch Dia76.2mm SiC substraten HPSI Prime Undersyk en Dummy klasse
-
4H-semi HPSI 2inch SiC substraat wafer Production Dummy Research grade