SiC
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4H-N 8 inch SiC substraat wafer Silicon Carbide Dummy Research grade 500um dikte
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4H-N/6H-N SiC Wafer Reasearch produksje Dummy grade Dia150mm Silicon carbide substraat
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Produksjeklasse 500um dikte
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HPSI SiC wafer dia: 3 inch dikte: 350um ± 25 µm foar Power Electronics
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8 inch SiC silisium carbid wafer 4H-N type 0.5mm produksje grade ûndersyk grade oanpaste gepolijst substraat
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3inch Hege suverens Semi-isolearjende (HPSI) SiC wafer 350um Dummy grade Prime grade
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P-type SiC substraat SiC wafer Dia2inch nij produkt
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2Inch 6H-N Silisiumkarbid Substraat Sic Wafer Dûbel gepolijst geleidend Prime Grade Mos Grade
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SiC silisiumkarbid wafer SiC wafer 4H-N 6H-N HPSI (Hege suverens Semi-isolearjend) 4H/6H-P 3C -n type 2 3 4 6 8inch beskikber
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2 inch Sic silisium carbid substraat 6H-N Type 0.33mm 0.43mm dûbelsidige polishing Hege termyske conductivity leech enerzjyferbrûk
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SiC substraat 3inch 350um dikte HPSI type Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N type Dummy / prime grade dikte kin oanpast wurde