4 inch SiC Wafers 6H Semi-isolearjende SiC Substraten prime, ûndersyk, en dummy grade
Produkt Spesifikaasje
Klasse | Zero MPD Production Grade (Z Grade) | Standert produksjeklasse (P-klasse) | Dummy Grade (D Grade) | ||||||||
Diameter | 99,5 mm~100,0 mm | ||||||||||
4H-SI | 500 μm±20 μm | 500 μm±25 μm | |||||||||
Wafer Oriïntaasje |
Off-as: 4.0° nei < 1120 > ± 0.5° foar 4H-N, op as: <0001> ± 0.5° foar 4H-SI | ||||||||||
4H-SI | ≤1 sm-2 | ≤5 sm-2 | ≤15 sm-2 | ||||||||
4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
Primêr Flat Oriïntaasje | {10-10} ±5,0° | ||||||||||
Primêr Flat Length | 32,5 mm±2,0 mm | ||||||||||
Secondary Flat Length | 18,0 mm±2,0 mm | ||||||||||
Secondary Flat Oriïntaasje | Silisium gesicht omheech: 90 ° CW. út Prime flat ± 5,0 ° | ||||||||||
Râne útsluting | 3 mm | ||||||||||
LTV / TTV / Bow / Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||||||||
Roughness | C gesicht | Poalsk | Ra≤1 nm | ||||||||
Si gesicht | CMP | Ra≤0,2 nm | Ra≤0,5 nm | ||||||||
Edge Cracks By High Intensity Light | Gjin | Kumulative lingte ≤ 10 mm, single lingte ≤2 mm | |||||||||
Hex Plates By High Intensity Light | Kumulatyf gebiet ≤0.05% | Kumulatyf gebiet ≤0,1% | |||||||||
Polytype Areas By High Intensity Light | Gjin | Kumulatyf gebiet≤3% | |||||||||
Visual Carbon Inclusions | Kumulatyf gebiet ≤0.05% | Kumulatyf gebiet ≤3% | |||||||||
Silisium oerflakkrassen troch ljocht mei hege yntinsiteit | Gjin | Kumulative lingte≤1* wafer diameter | |||||||||
Edge Chips High By Intensity Light | Gjin tastien ≥0,2 mm breedte en djipte | 5 tastien, ≤1 mm elk | |||||||||
Silisium oerflak fersmoarging troch hege yntinsiteit | Gjin | ||||||||||
Ferpakking | Multi-wafer Cassette Of Single Wafer Container |
Detaillearre diagram
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