Substraat
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Silicon Carbide SiC Ingot 6inch N type Dummy / prime grade dikte kin oanpast wurde
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6 yn silisiumkarbid 4H-SiC semi-isolearjende ingots, Dummy Grade
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SiC Ingot 4H type Dia 4inch 6inch Dikte 5-10mm Research / Dummy Grade
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3 inch hege suverens (net-gedopte) silisiumkarbid wafels semi-isolearjende Sic Substrates (HPSl)
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6 inch saffier Boule saffier blank ienkristal Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Type Hege hurdens Corrosie Resistance Prime Grade Polisearjen
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Dikte
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2inch silisium carbid substraat 6H-N dûbelsidige gepolijst diameter 50.8mm produksje grade ûndersyk klasse
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p-type 4H/6H-P 3C-N TYPE SIC substraat 4inch 〈111〉± 0.5°Nul MPD
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SiC substraat P-type 4H/6H-P 3C-N 4inch withe dikte fan 350um Production grade Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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P-type SiC wafer 4H/6H-P 3C-N 6 inch dikte 350 μm mei primêre platte oriïntaasje