Substraat
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Silicon Carbide SiC Ingot 6inch N type Dummy / prime grade dikte kin oanpast wurde
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SiC Ingot 4H-N type Dummy grade 2inch 3inch 4inch 6inch dikte:＞10mm
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HPSI SiC wafer dia: 3 inch dikte: 350um ± 25 µm foar Power Electronics
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3inch Hege suverens Semi-isolearjende (HPSI) SiC wafer 350um Dummy grade Prime grade
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Sic Substrate Silicon Carbide Wafer 4H-N Type Hege hurdens Corrosie Resistance Prime Grade Polisearjen
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2Inch 6H-N Silisiumkarbid Substraat Sic Wafer Dûbel gepolijst geleidend Prime Grade Mos Grade
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Dikte
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2inch silisium carbid substraat 6H-N dûbelsidige gepolijst diameter 50.8mm produksje grade ûndersyk klasse
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p-type 4H/6H-P 3C-N TYPE SIC substraat 4inch 〈111〉± 0.5°Nul MPD
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SiC substraat P-type 4H/6H-P 3C-N 4inch withe dikte fan 350um Production grade Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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P-type SiC wafer 4H/6H-P 3C-N 6 inch dikte 350 μm mei primêre platte oriïntaasje