SiC
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4H-N HPSI SiC-wafer 6H-N 6H-P 3C-N SiC Epitaksiale wafer foar MOS of SBD
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SiC Epitaksiale Wafer foar Power Apparaten - 4H-SiC, N-type, Lege Defektdichtheid
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4H-N Type SiC Epitaksiale Wafer Hege Spanning Hege Frekwinsje
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3 inch Hege suverens (ûndotearde) silisiumkarbidwafers heal-isolearjende Sic-substraten (HPSl)
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4H-N 8 inch SiC-substraatwafer Silisiumkarbide Dummy Undersyksklasse 500um dikte
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4H-N/6H-N SiC Wafer Reasearch produksje Dummy grade Dia150mm Silisiumkarbid substraat
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Au-coated wafer, saffierwafer, silisiumwafer, SiC-wafer, 2 inch 4 inch 6 inch, goudcoated dikte 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch
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2 inch Sic silisiumkarbid substraat 6H-N Type 0.33mm 0.43mm dûbelsidich polearjen Hege termyske gelieding leech enerzjyferbrûk
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SiC-substraat 3 inch 350um dikte HPSI-type Prime Grade Dummy-klasse
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Silisiumkarbide SiC-ingots 6 inch N-type Dummy/prime grade dikte kin oanpast wurde
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6 yn silisiumkarbid 4H-SiC healisolearjende ingots, dummy-kwaliteit