SiC
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4H-N 8 inch SiC substraat wafer Silicon Carbide Dummy Research grade 500um dikte
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4H-N/6H-N SiC Wafer Reasearch produksje Dummy grade Dia150mm Silicon carbide substraat
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12 inch SIC substraat silisiumkarbid prime grade diameter 300mm grutte maat 4H-N Geskikt foar hege macht apparaat waarmte dissipation
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HPSI SiC wafer dia: 3 inch dikte: 350um ± 25 µm foar Power Electronics
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8 inch SiC silisium carbid wafer 4H-N type 0.5mm produksje grade ûndersyk grade oanpaste gepolijst substraat
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3inch Hege suverens Semi-isolearjende (HPSI) SiC wafer 350um Dummy grade Prime grade
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P-type SiC substraat SiC wafer Dia2inch nij produkt
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Produksjeklasse 500um dikte
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2Inch 6H-N Silisiumkarbid Substraat Sic Wafer Dûbel gepolijst geleidend Prime Grade Mos Grade
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3 inch hege suverens (net-gedopte) silisiumkarbidwafels semi-isolearjende Sic Substrates (HPSl)
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Au coated wafer, saffier wafer, silicium wafer, SiC wafer, 2 inch 4 inch 6 inch, goud coated dikte 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch