Products
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4H-N 8 inch SiC substraat wafer Silicon Carbide Dummy Research grade 500um dikte
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4H-N/6H-N SiC Wafer Reasearch produksje Dummy grade Dia150mm Silicon carbide substraat
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12 inch SIC substraat silisiumkarbid prime grade diameter 300mm grutte maat 4H-N Geskikt foar hege macht apparaat waarmte dissipation
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Dia300x1.0mmt Dikte Sapphire Wafer C-Plane SSP/DSP
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HPSI SiC wafer dia: 3 inch dikte: 350um ± 25 µm foar Power Electronics
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8 inch SiC silisium carbid wafer 4H-N type 0.5mm produksje grade ûndersyk grade oanpaste gepolijst substraat
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8 inch 200mm Sapphire substraat saffierwafel tinne dikte 1SP 2SP 0.5mm 0.75mm
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Single crystal Al2O3 99.999% Dia200mm saffier wafels 1.0mm 0.75mm dikte
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156mm 159mm 6 inch Sapphire Wafer foar drager C-Plane DSP TTV
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C/A/M-as 4 inch saffierwafels ienkristal Al2O3, SSP DSP saffiersubstraat mei hege hurdens
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3inch Hege suverens Semi-isolearjende (HPSI) SiC wafer 350um Dummy grade Prime grade
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P-type SiC substraat SiC wafer Dia2inch nij produkt